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| ZTX300 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR | |||
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NPN SILICON PLANAR
SMALL SIGNAL TRANSISTOR
ISSUE 2 Â MARCH 94
ZTX300
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot
Tj:Tstg
C
B
E
E-Line
TO92 Compatible
VALUE
25
25
5
500
300
-55 to +175
UNIT
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 25
V
IC=10µA, IE=0
Collector-Emitter
Sustaining Voltage
VCEO(sus) 25
V
IC=5mA, IB=0
Emitter-Base
Breakdown Voltage
V(BR)EBO 5
V
IE=10µA, IC=0
Collector Cut-Off
ICBO
Current
0.2
µA
VCB=25V, IE=0
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
0.2
µA
0.35 V
VEB=4V, IC=0
IC=50mA, IB=5mA*
Base-Emitter
Saturation Voltage
VBE(sat)
0.65
1.0 V
IC=10mA, IB=1mA*
Static Forward Current hFE
50
Transfer Ratio
300
IC=10mA, VCE=6V*
Transition
Frequency
fT
150
MHz IC=10mA, VCE=6V
f=100MHz
Output Capacitance
Cobo
6
pF
VCB=6V, IE=0
f=1MHz
Noise Figure
N
7
dB
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
VCE=6V, f=1KHz
RS=1500â¦, IC=100µA
3-156
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