ZHCS506 Datasheet, PDF (1/3 Pages) Zetex Semiconductors – SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT”

SOT23 SILICON HIGH CURRENT
SCHOTTKY BARRIER DIODE “SuperBAT”
ZHCS5 0 6
ISSUE 1 - September 1997 7
FEATURES:
• Low V_F
• High Current Capability
APPLICATIONS:
• DC - DC converters
• Mobile telecomms
• PCMCIA
PARTMARK DETAIL: S56
ABSOLUTE MAXIMUM RATINGS.
1
C
2
1
A
3
3
SOT2 3
PARAMETER
SYMBOL
VALUE
UNIT
Continuous Reverse Voltage
V_R
Forward Current (Continuous)
I_F
Forward Voltage @ I_F = 500mA
V_F
Average Peak Forward Current; D.C. = 50%
I_FAV
Non Repetitive Forward Current t≤100µs
I_FSM
t≤1 0 ms
Power Dissipation at T_amb= 25° C
P_tot
Storage Temperature Range
T_stg
Junction Temperature
T_j
60
V
500
mA
630
mV
1000
mA
5.5
A
2.5
A
330
mW
-55 to + 150
°C
125
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25° C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown V_(BR)R
Voltage
60
80
V
I_R= 200µA
Forward Voltage
V_F
Reverse Current
I_R
275 310 mV
320 360 mV
415 470 mV
550 630 mV
680 800 mV
820 960 mV
1120 1350 mV
565
mV
20
40
µA
I_F= 50mA*
I_F= 100mA*
I_F= 250mA*
I_F= 500mA*
I_F= 750mA*
I_F= 1000mA*
I_F= 1500mA*
I_F= 500mA, T_amb= 100° C*
V_R= 45V
Diode Capacitance C_D
20
pF
f= 1MHz,V_R= 25V
Reverse Recovery
t_rr
Time
10
ns
switched from
I_F = 500mA to I_R = 500mA
Measured at I_R = 50mA
*Measured under pulsed conditions. Pulse width= 300µs; duty cycle ≤2% .