ZHCS400_07 Datasheet, PDF (1/6 Pages) Zetex Semiconductors – SOD323 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT”

ZHCS400
SOD323 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE
“SuperBAT”
FEATURES
• Low V_F
• High current capability
• Miniature surface mount package
SOD323
PINOUT - TOP VIEW
APPLICATIONS
• DC - DC converters
• Mobile telecomms
• PCMCIA
DEVICE MARKING
• Partmark detail - BD
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Continuous Reverse Voltage
Forward Current (Continuous)
Forward Voltage @ I_F =400mA
Average Peak Forward Current; D.C. = 50%
Non Repetitive Forward Current
tՅ100μs
tՅ10ms
Power Dissipation at T_amb=25°C
Storage Temperature Range
Junction Temperature
SYMBOL
V_R
I_F
V_F
I_FAV
I_FSM
P_tot
T_stg
T_j
Partmark is for example only
VALUE
40
400
500
1000
6.75
3
250
-55 to +150
125
UNIT
V
mA
mV
mA
A
A
mW
°C
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Reverse Breakdown Voltage V_(BR)R
Forward Voltage
V_F
Reverse Current
I_R
Diode Capacitance
C_D
Reverse Recovery Time
t_rr
40
60
V
I_R=200μA
270 300 mV
300 350 mV
370 460 mV
425 500 mV
550 670 mV
640 780 mV
810 1050 mV
440
mV
I_F=50mA
I_F=100mA
I_F=250mA
I_F=400mA
I_F=750mA
I_F=1000mA
I_F=1500mA
I_F=500mA, T_amb=100°C
15 40
μA
V_R=30V
20
pF
f=1MHz,V_R=25V
10
ns
switched from
I_F = 500mA to I_R = 500mA
Measured at I_R = 50mA
ISSUE 4 - MARCH 2007
1
SEMICONDUCTORS