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| ZHCS400 Datasheet, PDF (1/3 Pages) Zetex Semiconductors – SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT” | |||
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SOD323 SILICON HIGH CURRENT
SCHOTTKY BARRIER DIODE âSuperBATâ
ISSUE 1- NOVEMBER 1998 7
FEATURES:
⢠Low VF
⢠High Current Capability
⢠Miniature Surface Mount Package
APPLICATIONS:
⢠DC - DC converters
⢠Mobile telecomms
⢠PCMCIA
Partmark Detail - BD
ZHCS400
C
A
SOD323
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Continuous Reverse Voltage
Forward Current (Continuous)
Forward Voltage @ IF =400mA
Average Peak Forward Current; D.C. = 50%
Non Repetitive Forward Current tâ¤100µs
tâ¤10ms
Power Dissipation at Tamb=25°C
Storage Temperature Range
Junction Temperature
SYMBOL
VR
IF
VF
IFAV
IFSM
Ptot
Tstg
Tj
VALUE
40
400
500
1000
6.75
3
250
-55 to +150
125
UNIT
V
mA
mV
mA
A
A
mW
°C
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown V(BR)R
Voltage
40
60
V
IR=200µA
Forward Voltage
VF
Reverse Current
IR
Diode Capacitance CD
Reverse Recovery
trr
Time
270 300 mV IF=50mA*
300 350 mV IF=100mA*
370 460 mV IF=250mA*
425 500 mV IF=400mA*
550 670 mV IF=750mA*
640 780 mV IF=1000mA*
810 1050 mV IF=1500mA*
440
mV IF=500mA, Tamb=100°C*
15
40
µA VR=30V
20
pF
f=1MHz,VR=25V
10
ns switched from
IF = 500mA to IR = 500mA
Measured at IR = 50mA
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