ZDT6790 Datasheet, PDF (1/3 Pages) Zetex Semiconductors – COMPLEMENTARY MEDIUM POWER HIGH GAIN TRANSISTORS

SM-8 COMPLEMENTARY MEDIUM POWER
HIGH GAIN TRANSISTORS
ISSUE 1 - NOVEMBER 1995
ZDT6790
C1
C1
C2
C2
PARTMARKING DETAIL – T6790
B1
NPN
E1
B2
E2 ^PNP
SM-8
(8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Operating and Storage Temperature Range
V_CBO
V_CEO
V_EBO
I_CM
I_C
T_j:T_stg
NPN
PNP
45
-50
45
-40
5
-5
6
-6
2
-2
-55 to +150
UNIT
V
V
V
A
A
°C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
UNIT
Total Power Dissipation at T_amb = 25°C*
P_tot
Any single die “on”
Both die “on” equally
2.25
W
2.75
W
Derate above 25°C*
Any single die “on”
Both die “on” equally
18
mW/ °C
22
mW/ °C
Thermal Resistance - Junction to Ambient*
Any single die “on”
Both die “on” equally
55.6
°C/ W
45.5
°C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
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