ZDT617 Datasheet, PDF (1/3 Pages) Zetex Semiconductors – DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS

SM-8 DUAL NPN MEDIUM POWER
HIGH GAIN TRANSISTORS
ISSUE 1 - NOVEMBER 1995
ZDT617
C1
B1
C1
E1
C2
B2
C2
E2
PARTMARKING DETAIL — T617
SM-8
(8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Operating and Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_CM
I_C
T_j:T_stg
VALUE
15
15
5
12
3
-55 to +150
UNIT
V
V
V
A
A
°C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
UNIT
Total Power Dissipation at T_amb = 25°C*
P_tot
Any single die “on”
Both die “on” equally
2
W
2.5
W
Derate above 25°C*
Any single die “on”
Both die “on” equally
16
mW/ °C
20
mW/ °C
Thermal Resistance - Junction to Ambient*
Any single die “on”
Both die “on” equally
62.5
°C/ W
50
°C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
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