ZDT1147 Datasheet, PDF (1/3 Pages) Zetex Semiconductors – DUAL PNP MEDIUM POWER HIGH GAIN TRANSISTORS

SM-8 DUAL PNP MEDIUM POWER
HIGH GAIN TRANSISTORS
ISSUE 1 - AUGUST 1997
ZDT1147
C1
B1
C1
E1
C2
B2
C2
E2
PARTMARKING DETAIL – ZDT1147
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Operating and Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_CM
I_C
I_B
T_j:T_stg
SM-8
(8 LEAD SOT223)
VALUE
-15
-12
-5
-20
-5
-500
-55 to +150
UNIT
V
V
V
A
A
mA
°C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
UNIT
Total Power Dissipation at T_amb = 25°C*
P_tot
Any single die “on”
Both die “on” equally
2.0
W
2.75
W
Derate above 25°C*
Any single die “on”
Both die “on” equally
18
mW/ °C
22
mW/ °C
Thermal Resistance - Junction to Ambient*
Any single die “on”
Both die “on” equally
55.6
°C/ W
45.5
°C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.