ZDM4306N Datasheet, PDF (1/3 Pages) Zetex Semiconductors – DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS

SM-8 DUAL N-CHANNEL ENHANCEMENT
MODE MOSFETS
ISSUE 1 - NOVEMBER 1995
ZDM4306N
D1
G1
D1
S1
D2
G2
D2
S2
PARTMARKING DETAIL – M4306N
SM-8
(8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T_amb=25°C
Pulsed Drain Current
Gate-Source Voltage
Operating and Storage Temperature Range
SYMBOL
V_DS
I_D
I_DM
V_GS
T_j:T_stg
VALUE
60
2
15
± 20
-55 to +150
UNIT
V
A
A
V
°C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
UNIT
Total Power Dissipation at T_amb = 25°C*
P_tot
Any single die “on”
Both die “on” equally
2.5
W
3.0
W
Derate above 25°C*
Any single die “on”
Both die “on” equally
20
mW/ °C
24
mW/ °C
Thermal Resistance - Junction to Ambient*
Any single die “on”
Both die “on” equally
50.0
°C/ W
41.6
°C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB
with copper equal to 2 inches square.
Note:
This data is derived from development material and does not necessarily mean that the device will
go into production
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