ZDM4206N Datasheet, PDF (1/3 Pages) Zetex Semiconductors – DUAL N-CHANNEL ENHANCEMENT MODE AVALANCHE RATED MOSFET

SM-8 DUAL N-CHANNEL ENHANCEMENT
MODE AVALANCHE RATED MOSFET
ISSUE 1 - NOVEMBER 1995
ZDM4206N
D1
G1
D1
S1
D2
G2
D2
S2
PARTMARKING DETAIL – M4206N
SM-8
(8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T_amb=25°C
Pulsed Drain Current
Gate-Source Voltage
Continuous Body Diode Current at T_amb =25°C
Avalanche Current – Repetitive
Avalanche Energy – Repetitive
Operating and Storage Temperature Range
SYMBOL
V_DS
I_D
I_DM
V_GS
I_SD
I_AR
E_AR
T_j:T_stg
VALUE
60
1
8
± 20
1
600
15
-55 to +150
UNIT
V
A
A
V
A
mA
mJ
°C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
UNIT
Total Power Dissipation at T_amb = 25°C*
P_tot
Any single die “on”
Both die “on” equally
2.25
W
2.75
W
Derate above 25°C*
Any single die “on”
Both die “on” equally
18
mW/ °C
22
mW/ °C
Thermal Resistance - Junction to Ambient*
Any single die “on”
Both die “on” equally
55.6
°C/ W
45.5
°C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB
with copper equal to 2 inches square.
3 - 317