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| ZDC833A Datasheet, PDF (1/2 Pages) Zetex Semiconductors – SOT23 SILICON DUAL VARIABLE CAPACITANCE DIODE | |||
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SOT23 SILICON DUAL
VARIABLE CAPACITANCE DIODE
ISSUE 2 â JANUARY 1998
FEATURES
* VHF to UHF operation
* Common Cathode Dual Diode
* Monolithic construction
PIN CONFIGURATION
1
ZDC833A
2
1
APPLICATIONS
* Mobile radios and Pagers
* Cellular telephones
* Voltage controlled Crystal Oscillators
2
PARTMARKING DETAIL ZDC833A â C2A
ABSOLUTE MAXIMUM RATINGS.(Each Diode)
PARAMETER
SYMBOL
Forward Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
IF
Ptot
Tj:Tstg
3
3
SOT23
VALUE
200
330
-55 to +150
UNIT
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C ). (Each Diode)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown VBR
25
Voltage
V
IR = 10µA
Reverse Leakage
IR
Current
0.2
10
nA
VR = 20V
Temperature
η
Coefficient
400 ppm/°C VR = 3V, f=1MHz
Diode Capacitance
Capacitance Ratio
Figure of Merit
Cd
Cd / Cd
Q
29.7 33
5.0
200
36.3 pF
6.5
VR = 2V, f=1MHz
VR = 2V/20V, f=1MHz
VR = 3V, f=50MHz
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