ZC830 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – SOT23 SILICON VARIABLE CAPACITANCE DIODES

SOT23 SILICON VARIABLE
CAPACITANCE DIODES
ISSUE 5 – JANUARY 1998
FEATURES
1
* Close Tolerance C-V Characteristics
* High Tuning Ratio
* Low I_R
Enabling Excellent Phase Noise Performance
(I_R Typically <200pA at 25V)
3
ZC830/A/B
to
ZC836/A/B
2
1
3
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Forward Current
Power Dissipation at T_amb =25°C
Operating and Storage Temperature Range
SYMBOL
I_F
P_tot
T_j:T_stg
ELECTRICAL CHARACTERISTICS (at T_amb =25°C)
PARAMETER
SYMBOL MIN TYP
MAX
Reverse Breakdown
Voltage
V_BR
25
Reverse Voltage Leakage
I_R
Temperature Coefficient
η
of Capacitance
0.2
0.03
10
0.04
TUNING CHARACTERISTICS (at T_amb =25°C)
PART NO
Nominal Capacitance (pF)
V_R=2V, f=1MHz
MIN
NOM
MAX
Minimum
Q
@ V_R=3V
f=50MHz
ZC830A
9.0
10.0
11.0
300
ZC831A
13.5
15.0
16.5
300
ZC832A
19.8
22.0
24.2
200
ZC833A
29.7
33.0
36.3
200
ZC834A
42.3
47.0
51.7
200
ZC835A
61.2
68.0
74.8
100
ZC836A
90.0
100.0
110.0
100
Note:
No suffix ±20% (e.g. ZC830), suffix B ± 5% (e.g. ZC830B)
Spice parameter data is available upon request for this device
MAX
200
330
-55 to +150
UNIT
mA
mW
°C
UNIT CONDITIONS
V I_R=10µA
nA V_R=20V
%/°C V_R=3V, f=1MHz
Capacitance Ratio
C₂ / C₂₀
at f=1MHz
MIN
MAX
4.5
6.0
4.5
6.0
5.0
6.5
5.0
6.5
5.0
6.5
5.0
6.5
5.0
6.5