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| ZC2812E Datasheet, PDF (1/1 Pages) Zetex Semiconductors – DUAL SCHOTTKY BARRIER DIODES | |||
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SOT23 DUAL SCHOTTKY
BARRIER DIODES
ISSUE 3 - NOVEMBER 1995
7
1
1
ZC2812E
ZC2813E
2
1
3
2
3
ZC2813E
Common Anode
13E
3
2
ZC2812E
Series
12E
SOT23
Device
Type
Part Marking
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Power Dissipation at Tamb = 25°C
Operating and Storage Temperature Range
SYMBOL
Ptot
Tj:Tstg
VALUE
330
-55 to +150
UNIT
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT
CONDITIONS.
Breakdown Voltage
VBR 15
V
Reverse Leakage Current
IR
100 nA
Forward Voltage
VF
410 mV
Forward Current
IF 20
mA
Capacitance
CT
1.2 pF
Effective Minority Lifetime (1)
Ï
100 ps
(1) Sample Test.
For typical characteristics graphs see ZC2811E datasheet.
IR=10µA
VR=10V
IF=1mA
VF=1V
VR=0 V, f=1MHz
f= 54 MHz, Ipk=20mA
3 - 315
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