VN2222LL Datasheet, PDF (1/1 Pages) Motorola, Inc – TMOS FET Transistor

N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – FEB 94
VN2222LL
S
G
D
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T_amb = 25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T_amb = 25°C
Operating and Storage Temperature Range
SYMBOL
V_DS
I_D
I_DM
V_GS
P_tot
T_j:T_stg
TO92
VALUE
60
150
1
± 40
400
-55 to +150
UNIT
V
mA
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BV_DSS
60
V
I_D=100µA, V_GS=0V
Gate-Source Breakdown V_GS(th)
0.6
2.5
V
Voltage
ID=1mA, V_DS= V_GS
Gate Body Leakage
I_GSS
Zero Gate Voltage Drain I_DSS
Current (1)
On State Drain Current(1) I_D(on)
750
Static Drain Source On
State Voltage (1)
V_DS(on)
Static Drain Source On
State Resistance (1)
R_DS(on)
100
nA
10
µA
500
µA
mA
3.75
V
1.50
V
7.5
Ω
V_GS=± 30V, V_DS=0V
V_DS=48 V, V_GS=0V
VDS^{=48 V, V}GS^{=0V, T=125°C}
V_DS=10 V, V_GS=10V
V_GS=10V,I_D=500mA
V_GS=5V, I_D=200mA
V_GS=10V,I_D=500mA
Forward
g_fs
100
Transconductance (1)(2)
mS
V_DS=10V,I_D=500mA
Input Capacitance (2)
C_iss
Common Source Output C_oss
Capacitance (2)
60
pF
25
pF
V_DS=25 V, V_GS=0V
f=1MHz
Reverse Transfer
C_rss
Capacitance (2)
5
pF
Turn-On Time (2)(3)
t_(on)
10
ns
V_DD ≈15V, I_D=600mA
Turn-Off Time (2)(3)
t_(off)
10
ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%, (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
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