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| VN10LP Datasheet, PDF (1/1 Pages) Zetex Semiconductors – N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |||
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N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 1 â FEB 94
FEATURES
* 60 Volt VDS
* RDS(on)=5â¦
VN10LP
REFER TO ZVN3306A FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at Tamb = 25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at Tamb = 25°C
Operating and Storage Temperature Range
SYMBOL
VDS
ID
IDM
VGS
Ptot
Tj:Tstg
D
G
S
E-Line
TO92 Compatible
VALUE
60
270
3
± 20
625
-55 to +150
UNIT
V
mA
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BVDSS
60
V
ID=100µA, VGS=0V
Gate-Source
Breakdown Voltage
VGS(th)
0.8
2.5
V
ID=1mA, VDS= VGS
Gate Body Leakage
Zero Gate Voltage
Drain Current (1)
IGSS
IDSS
100 nA
10
µA
VGS=± 20V, VDS=0V
VDS=60 V, VGS=0V
On State Drain
Current(1)
ID(on)
750
mA
VDS=15 V, VGS=10V
Static Drain Source On RDS(on)
State Resistance (1)
Forward
gfs
100
Transconductance
(1)(2)
5.0
â¦
7.5
â¦
VGS=10V,ID=500mA
VGS=5V, ID=200mA
mS
VDS=15V,ID=500mA
Input Capacitance (2)
Common Source
Output Capacitance (2)
Ciss
Coss
60
pF
25
pF
VDS=25 V, VGS=0V
f=1MHz
Reverse Transfer
Crss
Capacitance (2)
5
pF
Turn-On Time (2)(3)
Turn-Off Time (2)(3)
t(on)
t(off)
10
ns
VDD â15V, ID=600mA
10
ns
3-90
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