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| SXTA42 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |||
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SOT89 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 Â JANUARY 1996
7
COMPLEMENTARY TYPE Â SXTA92
PARTMARKING DETAIL Â SID
SXTA42
C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot
Tj:Tstg
E
C
B
SOT89
VALUE
300
300
6
500
1
-65 to +150
UNIT
V
V
V
mA
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT
Collector-Base
V(BR)CBO 300
V
Breakdown Voltage
Collector-Emitter
V(BR)CEO 300
V
Breakdown Voltage
Emitter-Base
V(BR)EBO 6
V
Breakdown Voltage
Collector Cut-Off
ICBO
Current
0.1
µA
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
IEBO
VCE(sat)
0.1
µA
0.5
V
Base-Emitter
Saturation Voltage
VBE(sat)
0.9
V
Static Forward Current hFE
25
Transfer Ratio
40
40
Transition
Frequency
fT
50
MHz
Output Capacitance
Cobo
6
pF
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
For typical characteristics graphs see FMMTA42 datasheet.
CONDITIONS.
IC=100µA, IE=0
IC=1mA, IB=0*
IE=100µA, IC=0
VCB=200V, IE=0
VEB=6V, IC=0
IC=20mA, IB=2mA*
IC=20mA, IB=2mA*
IC=1mA, VCE=10V*
IC=10mA, VCE=10V*
IC=30mA, VCE=10V*
IC=10mA, VCE=20V
f=20MHz
VCB=20V, f=1MHz
3 - 306
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