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| MPSA06 Datasheet, PDF (1/1 Pages) NXP Semiconductors – NPN general purpose transistor | |||
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NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 2 Â FEB 94
FEATURES
* 80 Volt VCEO
* Gain of 50 at IC=100mA
MPSA06
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot
Tj:Tstg
E-Line
TO92 Compatible
VALUE
80
80
4
500
750
-55 to +175
UNIT
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT
Collector-Base
V(BR)CBO 80
V
Breakdown Voltage
Collector-Emitter
V(BR)CEO 80
V
Breakdown Voltage
Emitter-Base
V(BR)EBO 4
V
Breakdown Voltage
Collector Cut-Off
ICBO
Current
0.1
µA
Collector Cut-Off
ICES
Current
0.1
µA
Collector-Emitter
Saturation Voltage
VCE(sat)
0.25 V
Base-Emitter
Turn-On Voltage
VBE(on)
1.2 V
Static Forward Current hFE
50
Transfer Ratio
50
Transition
Frequency
fT
100
MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
CONDITIONS.
IC=100µA, IE=0
IC=1mA, IB=0*
IE=100µA, IC=0
VCB=80V, IE=0
VCE=60V
IC=100mA, IB=10mA*
IC=100mA, VCE=1V*
IC=10mA, VCE=1V*
IC=100mA, VCE=1V*
IC=10mA, VCE=2V
f=100MHz
3-76
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