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| FZTA92 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |||
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SOT223 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 2 Â JANUARY 1996 7
FEATURES
* High breakdown voltage
APPLICATIONS
* Suitable for video output stages in TV sets
and switch mode power supplies
COMPLIMENTARY TYPE Â
PARTMARKING DETAIL Â
FZTA42
DEVICE TYPE IN FULL
FZTA92
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Base Current
IB
Continuous Collector Current
IC
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX.
-300
V
-300
V
-5
V
-100
mA
-500
mA
2
W
-55 to +150
°C
UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -300
V
IC=-100µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO -300
V
IC=-1mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO -5
V
IE=-100µA, IC=0
Collector Cut-Off
ICBO
Current
-0.25 µA
VCB=-200V, IE=0
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.1 µA
-0.5 V
VEB=-3V, IC=0
IC=-20mA, IB=-2mA
Base-Emitter
Saturation Voltage
VBE(sat)
-0.9 V
IC=-20mA, IB=-2mA
Static Forward Current hFE
25
Transfer Ratio
40
25
Transition
Frequency
fT
50
MHz
IC=-1mA, VCE=-10V*
IC=-10mA, VCE=-10V*
IC=-30mA, VCE=-10V*
IC=-10mA, VCE=-20V
f=20MHz
Output Capacitance
Cobo
6
pF
VCB=-20V, f=1MHz
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
For typical characteristics graphs see FMMTA92 datasheet.
3 - 305
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