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| FZTA64 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – PNP SILICON PLANAR DARLINGTON TRANSISTORS | |||
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SOT223 PNP SILICON PLANAR
DARLINGTON TRANSISTORS
ISSUE 5â MARCH 2001
âª
FZTA64
4
PARTMARKING DETAILS: FZTA64
COMPLIMENTARY TYPE:
FZTA14
3
2
1
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Peak Base Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
IBM
Ptot
Tj:Tstg
SOT223
VALUE
-30
-30
-10
-800
-500
-200
2
-55 to +150
UNIT
V
V
V
mA
mA
mA
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base Breakdown V(BR)CBO -30
Voltage
V
IC=-10µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO -30
V
IC=-10mA, IB=0*
Emitter-Base Breakdown
Voltage
V(BR)EBO -10
V
IE=-10µA, IC=0
Collector Cut-Off
Current
ICBO
-100 nA
VCB=-30V, IE=0
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
IEBO
VCE(sat)
-100 nA
-1.5
V
VEB=-10V, IC=0
IC=-100mA, IB=-0.1mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-2.0
V
IC=-100mA, IB=-0.1mA*
Static Forward Current
hFE
10K
Transfer Ratio
20K
Transition
Frequency
fT
125
MHz
IC=-10mA, VCE=-5V
IC=-100mA, VCE=-5V*
IC=-50mA, VCE=-5V
f=20MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
TBA
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