FZT851 Datasheet, PDF (1/3 Pages) Zetex Semiconductors – NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS

SOT223 NPN SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTORS
ISSUE 2 - OCTOBER 1995
FEATURES
* Extremely low equivalent on-resistance; R_CE(sat) 44mΩ at 5A
* 6 Amps continuous current, up to 20 Amps peak current
* Very low saturation voltages
* Excellent h_FE characteristics specified up to 10 Amps
PARTMARKING DETAILS - DEVICE TYPE IN FULL
COMPLEMENTARY TYPES - FZT851 FZT951
FZT853 FZT953
FZT851
FZT853
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T_amb=25°C
Operating and Storage Temperature
Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_CM
I_C
P_tot
T_j:T_stg
FZT851
FZT853
150
200
60
100
6
6
20
10
6
3
-55 to +150
UNIT
V
V
V
A
A
W
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 square inch minimum
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