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| FZT790A Datasheet, PDF (1/2 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR | |||
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SOT223 PNP SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* Very low equivalent on-resistance; RCE(sat) 125m⦠at 2A
* Gain of 200 at IC=1 Amp and very low saturation voltage
FZT790A
C
APPLICATIONS
* DC-DC converters, Siren drivers.
COMPLEMENTARY TYPE - FZT690B
PARTMARKING DETAIL - FZT790A
ABSOLUTE MAXIMUM RATINGS.
E
C
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Peak Pulse Current
ICM
Continuous Collector Current
IC
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER
SYMBOL MIN. TYP. MAX.
-50
V
-40
V
-5
V
-6
A
-3
A
2
W
-55 to +150
°C
UNIT CONDITIONS.
Breakdown Voltages
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
V(BR)CBO -50
V(BR)CEO -40
V(BR)EBO -5
ICBO
IEBO
VCE(sat)
VBE(sat)
-70
V
-60
V
-8.5
V
-0.1 µA
-10 µA
-0.1 µA
-0.15 -0.25 V
-0.30 -0.45 V
-0.40 -0.75 V
-0.8 -1.0 V
IC=-100µA
IC=-10mA*
IE=-100µA
VCB=-30V
VCB=-30V, Tamb=100°C
VEB=-4V
IC=-500mA, IB=-5mA*
IC=-1A, IB=-10mA*
IC=-2A, IB=-50mA*
IC=-1A, IB=-10mA*
Base-EmitterTurn-OnVoltage VBE(on)
Static Forward Current
hFE
Transfer Ratio
Transition Frequency
fT
-0.75
V
IC=-1A, VCE=-2V*
300
800
IC=-10mA, VCE=-2V
250
IC=-500mA, VCE=-2V*
200
IC=-1A, VCE=-2V*
150
IC=-2A, VCE=-2V*
100
MHz IC=-50mA, VCE=-5V
f=50MHz
Output Capacitance
Switching Times
Cobo
ton
toff
24
pF
VCB=-10V,f=1MHz
35
ns
IC=-500mA,
600
ns
IB1=-50mA,
IB2=-50mA, VCC=-10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
Spice parameter data is available upon request for this device
3 - 248
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