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| FZT755_05 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 5 â MARCH 2005
FEATURES
* 150 Volt VCEO
* Low saturation voltage
* Excellent hFE specified up to 1A (pulsed).
COMPLEMENTARY TYPE â
PARTMARKING DETAIL â
FZT655
FZT755
FZT755
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
-150
V
-150
V
-5
V
-2
A
-1
A
2
W
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
C o l l e c t o r - B a s e V(BR)CBO
Breakdown Voltage
-150
V IC=-100µA
C o l l e c t o r - E m i t t e r V(BR)CEO
Breakdown Voltage
-150
V IC=-10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
-5
V IE=-100µA
Collector Cut-Off Current ICBO
Emitter Cut-Off Current IEBO
C o l l e c t o r - E m i t t e r VCE(sat)
Saturation Voltage
Base-Emitter
Saturation Voltage
VBE(sat)
-0.1
µA VCB=-125V
-0.1
µA VEB=-3V
-0.5
V IC=-500mA, IB=-50mA*
-0.5
V IC=-1A, IB=-200mA*
-1.1
V IC=-500mA, IB=-50mA*
Base-Emitter
Turn-On Voltage
VBE(on)
-1.0
V IC=-500mA, VCE=-5V*
Static Forward Current hFE
50
Transfer Ratio
50
20
Transition Frequency
fT
30
IC=-10mA, VCE=-5V*
300
IC=-500mA, VCE=-5V*
IC=-1A, VCE=-5V*
MHz IC= - 1 0 m A ,
f=20MHz
VCE=-20V
Output Capacitance
Cobo
20
pF
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle â¤2%
VCB=-10V f=1MHz
TBA
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