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| FZT755 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 Â FEBRUARY 1996 7
FEATURES
* 25 Volt VCEO
* Low saturation voltage
* Excellent hFE specified up to 6A (pulsed).
COMPLEMENTARY TYPE Â FZT655
PARTMARKING DETAIL Â FZT755
FZT755
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-150
V
Collector-Emitter Voltage
VCEO
-150
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-2
A
Continuous Collector Current
IC
-1
A
Power Dissipation at Tamb=25°C
Ptot
2
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -150
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO -150
V
IC=-10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO -5
V
IE=-100µA
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
ICBO
IEBO
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(sat)
-0.1 µA
-0.1 µA
-0.5 V
-0.5 V
-1.1 V
VCB=-125V
VEB=-3V
IC=-500mA, IB=-50mA*
IC=-1A, IB=-200mA*
IC=-500mA, IB=-50mA*
Base-Emitter
Turn-On Voltage
VBE(on)
-1.0 V
IC=-500mA, VCE=-5V*
Static Forward Current hFE
50
Transfer Ratio
50
20
Transition Frequency
fT
30
IC=-10mA, VCE=-5V*
300
IC=-500mA, VCE=-5V*
IC=-1A, VCE=-5V*
MHz
IC=-10mA, VCE=-20V
f=20MHz
Output Capacitance
Cobo
20
pF
VCB=-10V f=1MHz
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle â¤2%
3 - 238
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