 English |
|
|
|
|
|
|
|
| FZT751 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR | |||
| |||
|
SOT223 PNP SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
FZT751
ISSUE 2 Â FEBRUARY 1995
FEATURES
* 60 Volt VCEO
* 3 Amp continuous current
* Low saturation voltage
C
E
COMPLEMENTARY TYPE Â FZT651
PARTMARKING DETAIL Â FZT751
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-80
V
Collector-Emitter Voltage
VCEO
-60
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-6
A
Continuous Collector Current
IC
-3
A
Power Dissipation at Tamb=25°C
Ptot
2
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -80
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO -60
V
IC=-10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO -5
V
IE=100µA
Collector Cut-Off Current ICBO
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
IEBO
VCE(sat)
VBE(sat)
-0.1 µA
-10
µA
-0.1 µA
-0.15 0.3
V
-0.45 0.6
V
-0.9 -1.25 V
VCB=-60V
VCB=-60V,Tamb=100°C
VEB=-4V
IC=-1A, IB=-100mA*
IC=-3A, IB=-300mA*
IC=-1A, IB=-100mA*
Base-Emitter
Turn-On Voltage
VBE(on)
-0.8 -1.0 V
IC=-1A, VCE=-2V*
Static Forward Current hFE
Transfer Ratio
70
200
100 200 300
80
170
40
150
IC=-50mA, VCE =-2V*
IC=-500mA, VCE =-2V*
IC=-1A, VCE =-2V*
IC=-2A, VCE =-2V*
Transition Frequency
fT
100 140
MHz
IC=-100mA, VCE =-5V
f=100MHz
Switching Times
ton
40
ns
toff
450
ns
Output Capacitance
Cobo
30
pF
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
Spice parameter data is available upon request for this device
IC=-500mA, VCC =-10V
IB1=IB2=-50mA
VCB=-10V, f=1MHz
3 234
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese