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| FZT658 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |||
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SOT223 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 4 - OCTOBER 1995
FEATURES
* 400 Volt VCEO
* Low saturation voltage
FZT658
C
COMPLEMENTARY TYPE -
PARTMARKING DETAIL -
FZT758
FZT658
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
400
V
Collector-Emitter Voltage
VCEO
400
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
1
A
Continuous Collector Current
IC
0.5
A
Power Dissipation at Tamb=25°C
Ptot
2
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
V(BR)CBO 400
V(BR)CEO 400
V(BR)EBO 5
ICBO
IEBO
VCE(sat)
VBE(sat)
V
V
V
100
nA
100
nA
0.3
V
0.25
V
0.5
V
0.9
V
IC=100µA
IC=10mA*
IE=100µA
VCB=320V
VEB=4V
IC=20mA, IB=1mA*
IC=50mA, IB=5mA*
IC=100mA, IB=10mA
IC=100mA, IB=10mA*
Base-Emitter
Turn-On Voltage
VBE(on)
1.0
V
IC=100mA, VCE=5V*
Static Forward Current
hFE
50
Transfer Ratio
50
40
Transition Frequency
fT
50
MHz
IC=1mA, VCE=5V*
IC=100mA, VCE=5V*
IC=200mA, VCE=10V*
IC=10mA, VCE=20V
f=20MHz
Output Capacitance
Switching Times
Cobo
ton
toff
10
pF
130
ns
3300 ns
VCB=20V, f=1MHz
IC=100mA, VCC=100V
IB1=10mA, IB2=-20mA
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle â¤2%
Spice parameter data is available upon request for this device
3 - 215
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