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| FZT605 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS | |||
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SOT223 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTORS
ISSUE 4 - MARCH 2001
FEATURES
FZT605
* Guaranteed hFE Specified up to 2A
* Fast Switching
PARTMARKING DETAIL -
FZT605
COMPLEMENTARY TYPES - FZT705
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
140
V
Collector-Emitter Voltage
VCEO
120
V
Emitter-Base Voltage
VEBO
10
V
Peak Pulse Current
ICM
4
A
Continuous Collector Current
IC
1.5
A
Power Dissipation
Ptot
2
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 140
V
IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO 120
V
IC=10mA*
Emitter-Base Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current
Collector-Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward
Current Transfer Ratio
Transition Frequency
V(BR)EBO
ICBO
IEBO
ICES
VCE(sat)
VBE(sat)
VBE(on)
hFE
ft
10
0.01
10
0.1
10
1.0,
1.5
1.8
1.7
2K
5K
2K
0.5K
100K
150
V
µA
µA
µA
µA
V
V
V
V
MHz
IE=100µA
VCB=120V
VCB=120V,Tamb=100°C
VEB=8V
VCES=120V
IC=250mA, IB=0.25mA*
IC=1A, IB=1mA*
IC=1A, IB=1mA*
IC=1A, VCE=5V*
IC=50mA, VCE=5V
IC=500mA, VCE=5V*
IC=1A, VCE=5V*
IC=2A, VCE=5V*
IC=100mA, VCE=10V
f=20MHz
Input Capacitance
Cibo
90 Typical pF VEB=500mV, f=1MHz
Output Capacitance
Cobo
15 Typical pF VCB=10V, F=1MHz
Switching Times
ton
0.5 Typical nsec IC=500mA, VCE=10V
toff
1.6 Typical nsec IB1=IB2=0.5mA
* Measured under pulsed conditions. Pulse width = 300µs. Duty cycle 2%
Spice parameter data is available upon request for these devices.
TBA
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