FZT604 Datasheet, PDF (1/3 Pages) Zetex Semiconductors – SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS

SOT223 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTORS
ISSUE 3 - OCTOBER 1995
FEATURES
FZT604
FZT605
* Guaranteed h_FE Specified up to 2A
C
* Fast Switching
PARTMARKING DETAIL - DEVICE TYPE IN FULL
COMPLEMENTARY TYPES - FZT604 - FZT704
FZT605 - FZT705
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
FZT604 FZT605
UNIT
Collector-Base Voltage
V_CBO
120
140
V
Collector-Emitter Voltage
V_CEO
100
120
V
Emitter-Base Voltage
V_EBO
10
V
Peak Pulse Current
I_CM
4
A
Continuous Collector Current
I_C
1.5
A
Power Dissipation
P_tot
2
W
Operating and Storage Temperature Range T_j:T_stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
FZT604
Breakdown Voltage FZT605
Collector-Emitter
FZT604
Breakdown Voltage FZT605
Emitter-Base Breakdown Voltage
Collector Cut-Off
Current
FZT604
FZT605
Emitter Cut-Off Current
Collector-Emitter
Cut-Off Current
FZT604
FZT605
Collector-EmitterSaturation
Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward
Current Transfer Ratio
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
I_CES
V_CE(sat)
V_BE(sat)
V_BE(on)
h_FE
120
V
140
V
100
V
120
10
V
0.01 µA
10 µA
0.01 µA
10 µA
0.1 µA
10 µA
10 µA
1.0, V
1.5 V
1.8 V
1.7 V
2K
5K
2K 100K
0.5K
I_C=100µA
I_C=100µA
I_C=10mA*
I_C=10mA*
I_E=100µA
V_CB=100V
V_CB=100V,T_amb=100°C
V_CB=120V
V_CB=120V,T_amb=100°C
V_EB=8V
V_CES=100V
V_CES=120V
I_C=250mA, I_B=0.25mA*
I_C=1A, I_B=1mA*
I_C=1A, I_B=1mA*
I_C=1A, V_CE=5V*
I_C=50mA, V_CE=5V
I_C=500mA, V_CE=5V*
I_C=1A, V_CE=5V*
I_C=2A, V_CE=5V*
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