FZT603 Datasheet, PDF (1/3 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR

SOT223 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR
ISSUE 3 – NOVEMBER 1995
FEATURES
* 2A continuous current
* Useful h_FE up to 6A
* Fast Switching
PARTMARKING DETAIL – DEVICE TYPE IN FULL
FZT603
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V_CBO
100
V
Collector-Emitter Voltage
V_CEO
80
V
Emitter-Base Voltage
V_EBO
10
V
Peak Pulse Current
I_CM
6
A
Continuous Collector Current
I_C
2
A
Power Dissipation
P_tot
2
W
Operating and Storage Temperature Range
T_j:T_stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V_(BR)CBO
100 240
V
I_C=100µA
Collector-Emitter
Breakdown Voltage
V_(BR)CEO
80
110
V
I_C=10mA*
Emitter-Base Breakdown
Voltage
V_(BR)EBO
10
16
V
I_E=100µA
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Cut-Off Current
Collector-Emitter
Saturation Voltage
I_CBO
I_EBO
I_CES
V_CE(sat)
† Tj=150°C
0.01 µA
10
µA
0.1 µA
10
µA
0.79 0.88 V
0.80 0.90 V
0.88 1.00 V
0.99 1.13 V
0.86
V
V_CB=80V
V_CB=80V, T_amb=100°C
V_EB=8V
V_CES=80V
I_C=0.25A, I_B=0.25mA*
I_C=0.4A, I_B=0.4mA*
I_C=1A, I_B=1mA*
I_C=2A, I_B=20mA*
I_C=2A, I_B=20mA †