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| FZT600 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR | |||
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SOT223 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR
ISSUE 3 Â FEBRUARY 1997
FEATURES
* 2A continuous current
* 140 VOLT VCEO
* Guaranteed hFE Specified up to 1A
PART MARKING DETAIL Â FZT600
FZT600
C
E
C
ABSOLUTE MAXIMUM RATINGS.
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
160
V
Collector-Emitter Voltage
VCEO
140
V
Emitter-Base Voltage
VEBO
10
V
Peak Pulse Current
ICM
4
A
Continuous Collector Current
IC
2
A
Power Dissipation
Ptot
2
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
160
V
IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
140
V
IC=10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO
10
V
IE=100µA
Collector Cut-Off Current
ICBO
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
ICES
IEBO
VCE(sat)
Base-Emitter Saturation Voltage VBE(sat)
Base-Emitter Turn-On Voltage VBE(on)
Static Forward
hFE
Current Transfer
Ratio
GROUP B
Transition Frequency
fT
0.01 µA
10
µA
VCB=140V
VCB=140V, Tamb=100°C
10
µA
VCES=140V
0.1
µA
VEB=8V
0.75 1.1 V
0.85 1.2 V
IC=0.5A, IB=5mA*
IC=1A, IB=10mA*
1.7 1.9 V
IC=1A, IB=10mA*
1.5 1.7 V
IC=1A, VCE=5V*
1k
IC=50mA, VCE=10V*
2k
100k
IC=0.5A, VCE=10V*
1k
IC=1A, VCE=10V*
5k 10k
10k 20k 100k
5k 10k
IC=50mA, VCE=10V*
IC=0.5mA, VCE=10V*
IC=1A, VCE=10V*
150 250
MHz IC=100mA, VCE=10V
f=20MHz
Output Capacitance
Switching Times
Cobo
Ton
Toff
10 15
0.75
2.20
MHz
µs
µs
VCB=10V, f=1MHz
IC=0.5A, VCE=10V
IB1=IB2=0.5mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
Spice parameter data is available upon request for this device
3 - 197
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