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| FZT593 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |||
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SOT223 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 - NOVEMBER 1995
7
COMPLEMENTARY TO FZT493
PARTMARKING DETAIL - FZT593
FZT593
C
E
ABSOLUTE MAXIMUM RATINGS.
C
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-120
V
Collector-Emitter Voltage
VCEO
-100
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-2
A
Continuous Collector Current
IC
-1
A
Base Current
IB
-200
mA
Power Dissipation at Tamb=25°C
Ptot
2
W
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Breakdown Voltages
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Cut-Off Current
Saturation Voltages
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
ICES
VCE(sat)
Base-Emitter Turn-on Voltage
Static Forward Current Transfer
Ratio
VBE(sat)
VBE(on)
hFE
Transition Frequency
fT
-120
-100
-5
100
100
100
50
50
-100
-100
-100
-0.2
-0.3
-1.1
-1.0
300
V
V
V
nA
nA
nA
V
V
V
V
MHz
IC=-100µA
IC=-10mA*
IE=-100µA
VCB=-100V
VEB=-4V
VCES=-100V
IC=-250mA,IB=-25mA*
IC=-500mA IB=-50mA*
IC=-500mA,IB=-50mA*
IC=-1mA, VCE=-5V*
IC=-1mA, VCE=-5V
IC=-250mA,VCE=-5V*
IC=-500mA, VCE=-5V*
IC=-1A, VCE=-5V*
IC=-50mA, VCE=-10V
f=100MHz
Output Capacitance
Cobo
5
pF
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
For typical Characteristics graphs see FMMT593 datasheet
VCB=-10V, f=1MHz
3 - 196
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