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| FZT558 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR | |||
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SOT223 PNP SILICON PLANAR MEDIUM
POWER HIGH VOLTAGE TRANSISTOR
ISSUE 2 Â DECEMBER 1995
FEATURES
* 400 Volt VCEO
* 200mA continuous current
* Ptot= 2 Watt
FZT558
C
E
PARTMARKING DETAIL - FZT558
ABSOLUTE MAXIMUM RATINGS.
C
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Power Dissipation
Ptot
Operating and Storage Temperature Range
Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX.
-400
V
-400
V
-5
V
-200
mA
2
W
-55 to +150
°C
UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -400
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
VBR(CEO) -400
V
IC=-10mA*
Emitter-Base Breakdown V(BR)EBO -5
Voltage
V
IE=-100µA
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
ICBO
ICES
IEBO
VCE(sat)
VBE(sat)
-100 nA
-100 nA
-100 nA
-0.2 V
-0.5 V
-0.9 V
VCB=-320V
VCE=-320V
VEB=-4V
IC=-20mA, IB=-2mA*
IC=-50mA, IB=-6mA*
IC=-50mA, IB=-5mA*
Base-Emitter
Turn On Voltage
VBE(on)
-0.9 V
IC=-50mA, VCE=-10V*
Static Forward Current hFE
100
Transfer Ratio
100
15
Transition
Frequency
fT
50
IC=-1mA, VCE=-10V
300
IC=-50mA, VCE=-10V*
IC=-100mA, VCE=-10V*
MHz
IC=-10mA, VCE=-20V
f=20MHz
Collector-Base
Cobo
Breakdown Voltage
5
pF
VCB=-20V, f=1MHz
Switching times
ton
toff
95
ns
1600
ns
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
Spice parameter data is available upon request for this device
IC=-50mA, VC=-100V
IB1=5mA, IB2=-10mA
3 - 192
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