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| FZT458 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |||
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SOT223 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 4 Â JANUARY 1996
FEATURES
* 400 Volt VCEO
FZT458
C
COMPLEMENTARY TYPE Â FZT558
PARTMARKING DETAIL Â FZT458
ABSOLUTE MAXIMUM RATINGS.
E
C
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Peak Pulse Current
ICM
Base Current
IB
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN.
MAX.
400
V
400
V
5
V
300
mA
1
A
200
mA
2
W
-55 to +150
°C
UNIT
CONDITIONS.
Breakdown Voltages
V(BR)CBO 400
V
VCEO(sus) 400
V
V(BR)EBO
5
V
Collector Cut-Off Currents
ICBO
100
nA
ICES
100
nA
Emitter Cut-Off Current
IEBO
100
nA
Emitter Saturation Voltages
VCE(sat)
0.2
V
0.5
V
Base-Emitter
Turn On Voltage
VBE(sat)
VBE(on)
0.9
V
0.9
V
Static Forward
Current Transfer Ratio
hFE
100
100
300
15
Transition Frequency
fT
50
MHz
Collector-Base
Cobo
Breakdown Voltage
5
pF
Switching times
ton
135 Typical
ns
toff
2260 Typical
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
Spice parameter data is available upon request for this device
For typical characteristics graphs see FMMT458 datasheet
IC=100µA
IC=10mA*
IE=100µA
VCB=320V
VCE=320V
VEB=4V
IC=20mA, IB=2mA*
IC=50mA, IB=6mA*
IC=50mA, IB=5mA*
IC=50mA, VCE=10V*
IC=1mA, VCE=10V
IC=50mA, VCE=10V*
IC=100mA, VCE=10V*
IC=10mA, VCE=20V
f=20MHz
VCB=20V, f=1MHz
IC=50mA, VCC=100V
IB1=5mA, IB2=-10mA
3 - 187
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