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| FZT2222A Datasheet, PDF (1/2 Pages) Zetex Semiconductors – SOT223 NPN SILICON PLANAR SWITCHING TRANSISTOR | |||
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SOT223 NPN SILICON PLANAR
SWITCHING TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* 40 Volt VCEO
* Fast switching
FZT2222A
C
COMPLEMENTARY TYPE -
PARTMARKING DETAIL -
FZT2907A
FZT2222A
ABSOLUTE MAXIMUM RATINGS.
E
C
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
75
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
5
V
Continuous Collector Current
IC
600
mA
Power Dissipation at Tamb=25°C
Ptot
2
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to+150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
VALUE
UNIT CONDITIONS.
MIN. MAX.
Collector-Base Breakdown V(BR)CBO 75
Voltage
V
IC=10µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO 40
V
IC=10mA, IB=0 *
Emitter-Base Breakdown V(BR)EBO 6
Voltage
V
IE=10µA, IC=0
Collector Cut-Off Current ICBO
Emitter Cut-Off Current
IEBO
Collector-Emitter Cut-Off ICEX
Current
10
nA VCB=50V, IE=0
10
µA VCB=50V, IE=0, Tamb=150°C
10
nA VEB=3V, IC=0
10
nA VCE=60V, VEB(off)=3V
Collector-Emitter
Saturation Voltage
VCE(sat)
0.3
V
IC=150mA, IB=15mA*
1.0
V
IC=500mA, IB=50mA*
Base-Emitter
Saturation Voltage
VBE(sat)
0.6
1.2
V
IC=150mA, IB=15mA*
2.0
V
IC=500mA, IB=50mA*
Static Forward Current
hFE
Transfer Ratio
35
50
75
35
100
300
50
40
IC=0.1mA, VCE=10V*
IC=1mA, VCE=10V *
IC=10mA, VCE=10V*
IC=10mA, VCE=10V,Tamb=-55°C*
IC=150mA, VCE=10V*
IC=150mA, VCE=1V*
IC=500mA, VCE=10V*
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
Spice parameter data is available upon request for this device
3 - 296
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