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| FXTA92 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |||
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PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 1 Â MARCH 94
FEATURES
* 300 Volt VCEO
FXTA92
APPLICATIONS
* Telephone dialler circuits
REFER TO MPSA92 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot
Tj:Tstg
B
C
E
E-Line
TO92 Compatible
VALUE
-300
-300
-5
-500
680
-55 to +175
UNIT
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -300
V
IC=-100µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO -300
V
IC=-1mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO -5
V
IE=-10µA, IC=0
Collector Cut-Off
ICBO
Current
-0.25 µA
VCB=-200V, IE=0
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.1 µA
-0.5 V
VEB=-3V, IC=0
IC=-20mA, IB=-2mA
Base-Emitter
Saturation Voltage
VBE(sat)
-0.9 V
IC=-20mA, IB=-2mA
Static Forward Current hFE
25
Transfer Ratio
40
25
Transition
Frequency
fT
50
MHz
IC=-1mA, VCE=-10V*
IC=-10mA, VCE=-10V*
IC=-30mA, VCE=-10V*
IC=-10mA, VCE=-20V
f=20MHz
Output Capacitance
Cobo
6
pF
VCB=-20V, f=1MHz
3-65
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