 English |
|
|
|
|
|
|
|
| FXT757 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR | |||
| |||
|
PNP SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ISSUE 1 Â FEB 94
FEATURES
* 300 Volt VCEO
* 0.5 Amp continuous current
* Ptot= 1 Watt
FXT757
B
C
E
REFER TO ZTX757 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb = 25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
E-Line
TO92 Compatible
VALUE
-300
-300
-5
-1
-0.5
1
-55 to +200
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT
Collector-Base
V(BR)CBO -300
V
Breakdown Voltage
Collector-Emitter
V(BR)CEO -300
V
Breakdown Voltage
Emitter-Base
V(BR)EBO -5
V
Breakdown Voltage
Collector Cut-Off
ICBO
Current
-100 nA
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
-100 nA
-0.5 V
Base-Emitter
Saturation Voltage
VBE(sat)
-1.0 V
Base-Emitter Turn-On VBE(on)
Voltage
-1.0 V
Static Forward Current hFE
40
Transfer Ratio
50
Transition
Frequency
fT
30
MHz
Output Capacitance
Cobo
20
pF
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
CONDITIONS.
IC=-100µA, IE=0
IC=-10mA, IB=0*
IE=-100µA, IC=0
VCB=-200V, IE=0
VEB=-3V, IC=0
IC=-100mA, IB=-10mA*
IC=-100mA, IB=-10mA*
IC=-100mA, VCE=-5V*
IC=-10mA, VCE=-5V*
IC=-100mA, VCE=-5V*
IC=-10mA, VCE=-20V
f=20MHz
VCB=-20V, f=1MHz
3-60
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese