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| FXT749 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 Â FEB 94
FEATURES
* 25 Volt VCEO
* 2 Amp continuous current
* Low saturation voltage
* Ptot= 1 Watt
REFER TO ZTX749 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
FXT749
BC
E
E-Line
TO92 Compatible
VALUE
-35
-25
-5
-6
-2
1
-55 to +200
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -35
V
IC=-100µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO -25
V
IC=-10mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO -5
V
IE=-100µA, IC=0
Collector Cut-Off
ICBO
Current
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(sat)
-0.1 µA
-10
µA
-0.1 µA
-0.12 -0.3 V
-0.23 -0.5 V
-0.9 -1.25 V
VCB=-30V
VCB=-30V,Tamb=100°C
VEB=-4V, IE=0
IC=-1A, IB=-100mA*
IC=-2A, IB=-200mA*
IC=-1A, IB=-100mA*
Base-Emitter
Turn-On Voltage
VBE(on)
-0.8 -1
V
IC=-1A, VCE=-2V*
Static Forward Current hFE
Transfer Ratio
Transition
fT
Frequency
70
200
100 200 300
75
150
15
50
IC=-50mA, VCE=-2V*
IC=-1A, VCE=-2V*
IC=-2A, VCE=-2V*
IC=-6A, VCE=-2V*
100 160
MHz IC=-100mA, VCE=-5V
f=100MHz
Output Capacitance
Cobo
100 pF
VCB=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
3-56
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