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| FXT655 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 Â FEB 94
FEATURES
* 150 Volt VCEO
* 1 Amp continuous current
* Low saturation voltage
* Ptot= 1 Watt
REFER TO ZTX655 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipationat Tamb =25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
FXT655
BC
E
E-Line
TO92 Compatible
VALUE
150
150
5
2
1
1
-55 to +200
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT
Collector-Base
V(BR)CBO 150
V
Breakdown Voltage
Collector-Emitter
V(BR)CEO 150
V
Breakdown Voltage
Emitter-Base
V(BR)EBO 5
V
Breakdown Voltage
Collector Cut-Off
ICBO
Current
100 nA
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
100 nA
0.5 V
0.5 V
Base-Emitter
Saturation Voltage
VBE(sat)
1.1 V
Base-Emitter
Turn-On Voltage
VBE(on)
1
V
Static Forward Current hFE
50
Transfer Ratio
50
20
Transition
Frequency
fT
30
MHz
Output Capacitance
Cobo
20
pF
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle â¤2%
CONDITIONS.
IC=100µA, IE=0
IC=10mA, IB=0*
IE=100µA, IC=0
VCB=125V, IE=0
VEB=3V, IC=0
IC=500mA, IB=50mA*
IC=1A, IB=200mA*
IC=500mA, IB=50mA*
IC=500mA, VCE=5V*
IC=10mA, VCE=5V
IC=500mA, VCE=5V*
IC=1A, VCE=5V*
IC=10mA, VCE=20V
f=20MHz
VCB=20V, f=1MHz
3-49
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