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| FXT653 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 Â MARCH 94
FEATURES
* 100 Volt VCEO
* 2 Amps continuous current
* Low saturation voltage
* Ptot= 1 Watt
REFER TO ZTX653 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
FXT653
BC
E
E-Line
TO92 Compatible
VALUE
120
100
5
6
2
1
-55 to +200
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 120
V
IC=100µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO 100
V
IC=10mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO 5
V
IE=100µA, IC=0
Collector Cut-Off
ICBO
Current
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(sat)
0.1
µA
10
µA
0.1
µA
0.13 0.3 V
0.23 0.5 V
0.9 1.25 V
VCB=100V, IE=0
VCB=100V,Tamb=100°C
VEB=4V, IC=0
IC=1A, IB=100mA*
IC=2A, IB=200mA*
IC=1A, IB=100mA*
Base-Emitter
Turn-On Voltage
VBE(on)
0.8 1
V
IC=1A, VCE=2V*
Static Forward Current hFE
Transfer Ratio
Transition
fT
Frequency
70
200
100 200 300
55
110
25
55
IC=50mA, VCE=2V*
IC=500mA, VCE=2V*
IC=1A, VCE=2V*
IC=2A, VCE=2V*
140 175
MHz IC=100mA, VCE=5V
f=100MHz
Output Capacitance
Cobo
30
pF
VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle â¤2%
3-48
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