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| FXT605 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR | |||
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NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTOR
FXT605
ISSUE 1 Â SEPT 93
FEATURES
* 120 Volt VCEO
* Gain of 2K at IC=1 Amp
* Ptot= 1 Watt
APPLICATIONS
* Lamp, solenoid and relay drivers
* Replacement of TO126 and TO220 packages
REFER TO ZTX605 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
BC
E
E-Line
TO92 Compatible
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
140
V
Collector-Emitter Voltage
VCEO
120
V
Emitter-Base Voltage
VEBO
10
V
Peak Pulse Current
ICM
4
A
Continuous Collector Current
IC
1
A
Power Dissipation at Tamb = 25°C
Ptot
1
W
Operating and Storage Temperature Range Tj:Tstg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 140
V
IC=100µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO 120
V
IC=10mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO 10
V
IE=100µA, IC=0
Collector Cut-Off
ICBO
Current
Emitter Cut-Off Current IEBO
Colllector-Emitter
ICES
Cut-Off Current
0.01 µA
10
µA
0.1
µA
10
µA
VCB=120V, IE=0
VCB=120V,Tamb=100°C
VEB=8V, IC=0
VCES=120V
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
VCE(sat)
VBE(sat)
1.0 V
1.5 V
1.8 V
IC=0.25A, IB=0.25mA*
IC=1A, IB=1mA*
IC=1A, IB=1mA*
Base-Emitter
Turn-On Voltage
VBE(on)
1.7 V
IC=1A, VCE=5V*
Static Forward Current hFE
Transfer Ratio
Transition
fT
Frequency
2000
5000
2000
500
150
100K
MHz
IC=50mA, VCE=5V*
IC=500mA, VCE=5V*
IC=1A, VCE=5V*
IC=2A, VCE=5V*
IC=100mA, VCE=10V
f=20MHz
* Measured under pulse conditions. Pulse width=300µs. Duty cycle â¤2%
3-44
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