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| FXT557 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 Â MARCH 94
FEATURES
* 300 Volt VCEO
* 0.5 Amp continuous current
* Ptot= 1 Watt
FXT557
REFER TO ZTX557 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
B
C
E
E-Line
TO92 Compatible
VALUE
-300
-300
-5
-1
-0.5
1
-55 to +200
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT
Collector-Base
V(BR)CBO -300
V
Breakdown Voltage
Collector-Emitter
V(BR)CEO -300
V
Breakdown Voltage
Emitter-Base
V(BR)EBO -5
V
Breakdown Voltage
Collector Cut-Off
ICBO
Current
-0.1 µA
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.1 µA
-0.3 V
Base-Emitter
Saturation Voltage
VBE(sat)
-1
V
Base-Emitter
Turn-on Voltage
VBE(on)
-1
V
Static Forward Current hFE
50
Transfer Ratio
50
300
Transition
Frequency
fT
75
MHz
Output Capacitance
Cobo
10
pF
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
CONDITIONS.
IC=-100µA, IE=0
IC=-10mA, IB=0*
IE=-100µA, IC=0
VCB=-200V, IE=0
VEB=-4V, IC=0
IC=-50mA, IB=-5mA*
IC=-50mA, IB=-5mA*
IC=-50mA, VCE=-10V*
IC=-10mA, VCE=-10V*
IC=-50mA, VCE=-10V*
IC=-50mA, VCE=-10V
f=100MHz
VCE=-10V, f=1MHz
3-41
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