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| FXT550 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 Â SEPT 93
FEATURES
* 45 Volt VCEO
* 1 Amp continuous current
* Ptot= 1 Watt
FXT550
REFER TO ZTX550 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
B
C
E
E-Line
TO92 Compatible
VALUE
-60
-45
-5
-2
-1
1
-55 to +200
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -60
V
IC=-100µA, IE=0
Collector-Emitter
Sustaining Voltage
VCEO(sus) -45
V
IC=-10mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO -5
V
IE=-100µA, IC=0
Collector Cut-Off
ICBO
Current
-0.1 µA
VCB=-45V, IE=0
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.1 µA
-0.25 V
VEB=-4V, IC=0
IC=-150mA, IB=-15mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-1.1 V
IC=-150mA, IB=-15mA*
Static Forward Current hFE
100
Transfer Ratio
15
Transition
Frequency
fT
150
300
IC=-150mA, VCE=-10V*
IC=-1A, VCE=-10V*
MHz IC=-50mA, VCE=-10V
f=100MHz
Output Capacitance
Cobo
25
pF
VCB=-10V,f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
3-37
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