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| FXT458 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR | |||
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NPN SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ISSUE 1 Â SEPTEMBER 1994
FEATURES
* 400 Volt VCEO
* 0.5 Amp continuous current
* Ptot= 1 Watt
FXT458
REFER TO ZTX458 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX.
Collector-Base
Breakdown Voltage
V(BR)CBO 400
Collector-Emitter
Breakdown Voltage
VCEO(sus) 400
Emitter-Base
Breakdown Voltage
V(BR)EBO 5
Collector Cut-Off
ICBO
100
Current
Collector Cut-Off
ICES
100
Current
Emitter Cut-Off Current IEBO
100
Collector-Emitter
VCE(sat)
0.2
Saturation Voltage
0.5
Base-Emitter
VBE(sat)
0.9
Saturation Voltage
Base-Emitter
VBE(on)
0.9
Turn On Voltage
Static Forward Current hFE
100
Transfer Ratio
100
300
15
Transition Frequency fT
50
Collector-Base
Cobo
5
Breakdown Voltage
B
C
E
E-Line
TO92 Compatible
VALUE
400
400
5
300
1
-55 to +200
UNIT
V
V
V
mA
W
°C
UNIT
V
CONDITIONS.
IC=100µA
V
IC=10mA*
V
IE=100µA
nA
VCB=320V
nA
VCE=320V
nA
V
V
V
V
MHz
pF
VEB=4V
IC=20mA, IB=2mA
IC=50mA, IB=6mA
IC=50mA, IB=5mA
IC=50mA, VCE=10V
IC=1mA, VCE=10V
IC=50mA, VCE=10V
IC=100mA, VCE=10V*
IC=10mA, VCE=20V
f=20MHz
VCB=20V, f=1MHz
3-35
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