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| FXT455 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 Â SEPT 93
FEATURES
* 140 Volt VCEO
* 1 Amp continuous current
* Ptot= 1 Watt
FXT455
REFER TO ZTX455 FOR GRAPHS
B
C
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
VALUE
160
140
5
2
1
1
-55 to +200
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 160
V
IC=100µA, IE=0
Collector-Emitter
Sustaining Voltage
VCEO(sus) 140
V
IC=10mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO 5
V
IE=100µA, IC=0
Collector Cut-Off
ICBO
Current
0.1
µA
VCB=140V, IE=0
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
0.1
µA
VEB=4V, IC=0
0.7 V
IC=150mA, IB=15mA*
Static Forward Current hFE
Transfer Ratio
Transition
fT
Frequency
100
10
100
300
IC=150mA, VCE=10V*
IC=1A, VCE=10V*
MHz IC=50mA, VCE=10V
f=100MHz
Output Capacitance
Cobo
15
pF
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
3-34
VCB=10V, f=1MHz
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