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| FXT38C Datasheet, PDF (1/1 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR | |||
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NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR
ISSUE 1 Â SEPT 93
FEATURES
* 60 Volt VCEO
* Gain of 10K at IC=0.5 Amp
FXT38C
REFER TO BCX38 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
B
C
E
E-Line
TO92 Compatible
VALUE
80
60
10
2
800
1
-55 to +200
UNIT
V
V
V
A
mA
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 80
V
IC=10µA, IE=0
Collector-Emitter
Sustaining Voltage
VCEO(sus) 60
V
IC=10mA, IB=0
Emitter-Base
Breakdown Voltage
V(BR)EBO 10
V
IE=10µA, IC=0
Collector Cut-Off
ICBO
Current
100 nA
VCB=60V, IE=0
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
100 nA
1.25 V
VEB=8V, IC=0
IC=800mA, IB=8mA*
Base-Emitter
Turn-On Voltage
VBE(on)
1.8
V
IC=800mA, VCE=5V*
Static Forward Current hFE
Transfer Ratio
5000
10000
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
3-29
IC=100mA, VCE=5V*
IC=500mA, VCE=5V*
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