 English |
|
|
|
|
|
|
|
| FXT2907A Datasheet, PDF (1/2 Pages) Zetex Semiconductors – PNP SILICON PLANAR SWITCHING TRANSISTOR | |||
| |||
|
PNP SILICON PLANAR
SWITCHING TRANSISTOR
ISSUE 2 Â SEPTEMBER 94
FEATURES
* 60 Volt VCEO
* Fast switching
FXT2907A
B
C
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot
Tj:Tstg
E-Line
TO92 Compatible
VALUE
-60
-60
-5
-600
500
-55 to +175
UNIT
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
V(BR)CBO -60
Breakdown Voltage
V
IC=-10µA, IE=0
Collector-Emitter
V(BR)CEO -60
Breakdown Voltage
V
IC=-10mA, IB=0*
Emitter-Base
V(BR)EBO -5
Breakdown Voltage
V
IE=-10µA, IC=0
Collector-Emitter
ICEX
Cut-Off Current
-50
nA
VCE=-30V, VBE=-0.5V
Collector Cut-Off
ICBO
Current
Base Cut-Off Current
Collector-Emitter
Saturation Voltage
IB
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(sat)
Static Forward
hFE
75
Current Transfer
100
Ratio
100
100
50
Transition
Frequency
fT
200
-10
nA
VCB=-50V, IE=0
-10
µA
VCB=-50V, IE=0, Tamb=150°C
-50
nA
VCE=-30V, VBE=-0.5V
-0.4 V
-1.6 V
IC=-150mA, IB=-15mA*
IC=-500mA, IB=-50mA*
-1.3 V
-2.6 V
IC=-150mA, IB=-15mA*
IC=-500mA, IB=-50mA*
IC=-0.1mA, VCE=-10V
IC=-1mA, VCE=-10V
IC=-10mA, VCE=-10V
300
IC=-150mA, VCE=-10V*
IC=-500mA, VCE=-10V*
MHz IC=-50mA, VCE=-20V
f=100MHz
*Measured under pulsed conditions. Pulse width=300ms. Duty cycle ⤠2%
PAGE NO
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese