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| FMMV109 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE | |||
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SOT23 SILICON PLANAR
VARIABLE CAPACITANCE DIODE
ISSUE 4 â JANUARY 1998
PIN CONFIGURATION
1
PARTMARKING DETAIL
FMMV109 â 4A
FMMV109
2
1
3
3
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
Ptot
Tj:Tstg
VALUE
330
-55 to +150
UNIT
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown VBR
30
Voltage
V
IR = 10µA
Reverse current
IR
Series Inductance
LS
Diode Capacitance
TCC
Temperature
Coefficient
10
3.0
280
nA
VR = 25V
nH
f=250MHz
ppm/ °C VR = 3V, f=1MHz
Case Capacitance
CC
0.1
pF
f=1MHz
TUNING CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Diode Capacitance
Cd
26
32
pF
Capacitance Ratio
Cd / Cd
5.0
6.5
Figure of MERIT
Q
200 250
Spice parameter data is available upon request for this device
VR = 3V, f=1MHz
VR = 3V/25V, f=1MHz
VR = 3V, f=50MHz
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