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| FMMTH10 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – NPN SILICON PLANAR RF TRANSISTOR | |||
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SOT23 NPN SILICON PLANAR
RF TRANSISTOR
ISSUE 2 Â NOVEMBER 1995
FEATURES
* High fT=650MHz
* Maximum capacitance 0.7pF
* Low noise < 5dB at 500MHz
FMMTH10
E
C
B
PARTMARKING DETAIL Â 3EZ
ABSOLUTE MAXIMUM RATINGS.
SOT23
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Emitter Voltage
VCES
30
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
3
V
Continuous Collector Current
IC
25
mA
Peak Pulse Current
ICM
50
mA
Power Dissipation at Tamb=25°C
Ptot
330
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base Breakdown V(BR)CBO 30
Voltage
Collector-Emitter
Breakdown Voltage
V(BR)CEO 25
V
IC=100µA, IE=0
V
IC=1mA, IB=0
Emitter-Base Breakdown V(BR)EBO 3
Voltage
V
IE=10µA, IC=0
Collector Cut-Off
ICBO
Current
100
nA
VCB=25V, IE=0
Emitter Cut-Off Current
IEBO
Collector-Emitter Saturation VCE(sat)
Voltage
100
nA
0.5
V
VEB=2V,IC=0
IC=4mA, IB=0.4mA
Common Base Feedback Crb
Capacitance
Typ. 0.65 pF
0.45
VCB=10V, IE=0
f=1MHz
Base-Emitter Turn-On
Voltage
VBE(on)
0.95 V
IC=4mA, VCE=10V
Static Forward Current
hFE
60
Transfer Ratio
IC=4mA, VCE=10V*
Transition Frequency
fT
Collector Base Capacitance Ccb
Collector Base Time Constant rbCc
Noise Figure
Nf
650
0.7
9
Typ. 5
3
MHz
pF
ps
dB
IC=4mA, VCE=10V, f=100MHz
VCB=10V, IE=0, f=1MHz
IC=4mA, VCB=10V, f=31.8MHz
IC=2mA, VCE=5V
f=500MHz,
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
Spice parameter data is available upon request for this device
3 - 181
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