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| FMMTA64 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – PNP SILICON PLANAR DARLINGTON TRANSISTOR | |||
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SOT23 PNP SILICON PLANAR
DARLINGTON TRANSISTOR
ISSUE 3 â MARCH 2001
âª
PARTMARKING DETAIL â
FMMTA64 - Z2V
COMPLEMENTARY TYPES â FMMTA64 - FMMTA14
FMMTA64
E
C
B
ABSOLUTE MAXIMUM RATINGS.
SOT23
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Peak Pulse Current
ICM
Continuous Collector Current
IC
Peak Base Current
IBM
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL
FMMTA64
-30
V
-30
V
-10
V
-800
mA
-500
mA
-200
mA
330
mW
-55 to +150
°C
UNIT CONDITIONS.
MIN. MAX.
Collector-Base Breakdown
Voltage
V(BR)CBO -30
V
IC=-10µA, IE=0
Collector-Emitter Breakdown
Voltage
V(BR)CEO -30
V
IC=-10mA, IB=0*
Emitter-Base Breakdown
Voltage
V(BR)EBO -10
V
IE=-10µA, IC=0
Collector Cut-Off
Current
ICBO
-0.1 µA
VCB=-30V, IE=0
Emitter Cut-Off Current
Static Forward Current
Transfer Ratio
IEBO
hFE
-0.1 µA
10K
20K
Collector-Emitter Saturation
Voltage
VCE(sat)
-1.5 V
VCE=-10V
IC=-10mA, VCE=5V*
IC=-100mA, VCE=5V*
IC=-100mA, IB=-0.1mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-2.0 V
IC=-100mA, IB=-0.1mA*
Transition
Frequency
fT
125
MHz
IC=-50mA, VCE=-5V
f=20MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
For typical characteristics graphs see FZTA64 datasheet.
TBA
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