 English |
|
|
|
|
|
|
|
| FMMTA55 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS | |||
| |||
|
SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 Â JANUARY 1996 7
FEATURES
FMMTA55
FMMTA56
* Gain of 50 at IC=100mA
PARTMARKING DETAIL -
FMMTA55 - 2H
FMMTA56 - 2G
FMMTA55R - NB
FMMTA56R - MB
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature
Range
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot
Tj:Tstg
E
C
B
SOT23
FMMTA55 FMMTA56
-60 -80
-60 -80
-4
-500
330
-55 to +150
UNIT
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
FMMTA55 FMMTA56
PARAMETER
SYMBOL MIN. MAX. MIN. MAX. UNIT CONDITIONS.
Collector-Emitter
V(BR)CEO -60
-80
V
IC=-1mA, IB=0*
Breakdown Voltage
Emitter-Base
V(BR)EBO -4
-4
V
IE=-100µA, IC=0
Breakdown Voltage
Collector-Emitter
ICES
Cut-Off Current
-0.1
-0.1 µA VCE=-60V
Collector-Base
ICBO
Cut-Off Current
Static Forward
hFE
50
Current Transfer Ratio
50
Collector-Emitter
VCE(sat)
Saturation Voltage
Base-Emitter
Turn-On Voltage
VBE(on)
-0.1
50
50
-0.25
-1.2
-0.1 µA
-0.25 V
-1.2 V
VCB=-80V, IE=0
VCB=-60V, IE=0
IC=-10mA, VCE=1V*
IC=-100mA, VCE=1V*
IC=-100mA,
IB=-10mA*
IC=-100mA, VCE=-1V*
Transition
Frequency
fT
100
100
MHz IC=-10mA, VCE=-2V
f=100MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
3 - 177
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese