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| FMMTA43 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTORS | |||
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SOT23 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTORS
ISSUE 4 â MARCH 2001
âª
PARTMARKING DETAIL â
FMMTA42 â 3E
FMMTA42R â
7E
FMMTA42
E
C
B
COMPLEMENTARY TYPES â FMMTA42 â FMMTA92
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SOT23
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot
Tj:Tstg
FMMTA42
300
300
5
200
330
-55 to +150
UNIT
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. MAX. MIN. MAX. UNIT CONDITIONS.
Collector-Base
V(BR)CBO 300
200
V
IC=100µA, IE=0
Breakdown Voltage
Collector-Emitter
V(BR)CEO 300
200
V
IC=1mA, IB=0*
Breakdown Voltage
Emitter-Base
V(BR)EBO 6
6
V
IE=100µA, IC=0
Breakdown Voltage
Collector Cut-Off
Current
ICBO
0.1
µA
VCB=200V, IE=0
0.1
µA
VCB=160V, IE=0
Emitter Cut-Off
Current
IEBO
0.1
µA
VEB=6V, IC=0
0.1
µA
VEB=4V, IC=0
Collector-Emitter
VCE(sat)
0.5
0.4 V
IC=20mA, IB=2mA*
Saturation Voltage
Base-Emitter
VBE(sat)
0.9
0.9 V
IC=20mA, IB=2mA*
Saturation Voltage
Static Forward
hFE
25
Current Transfer
40
Ratio
40
Transition
Frequency
fT
50
25
40
50
200
IC=1mA, VCE=10V*
IC=10mA, VCE=10V*
IC=30mA, VCE=10V*
50
MHz IC=10mA, VCE=20V
f=20MHz
Output Capacitance Cobo
6
8
pF
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
VCB=20V, f=1MHz
TBA
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