FMMTA20 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR

SOT23 NPN SILICON PLANAR
SMALL SIGNAL TRANSISTOR
ISSUE 2 – MARCH 1995
PARTMARKING DETAIL –
FMMTA20 – 1C
FMMTA20R – 3C
COMPLEMENTARY TYPE – FMMTA70
FMMTA20
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
SOT23
VALUE
UNIT
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T_amb=25°C
Operating and Storage Temperature Range
V_CEO
V_EBO
I_C
P_tot
T_j:T_stg
40
V
4
V
100
mA
330
mW
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C).
PARAMETER
SYMBOL MIN. MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V_(BR)CBO 40
V
I_C=1mA, I_E=0
Emitter-Base
Breakdown Voltage
V_(BR)EBO
4
V
I_E=100mA, I_C=0
Collector Cut-Off
I_CBO
Current
0.1
µA
V_CB=30V, I_E=0
Static Forward
h_FE
Current Transfer Ratio
40
400
I_C=5mA, V_CE=10V*
Collector-Emitter
Saturation Voltage
V_CE(sat)
0.25 V
I_C=10mA,I_B=1mA
Transition
Frequency
f_T
125
MHz
I_C=5mA, V_CE=10V
f=100MHz
Output Capacitance
C_obo
4
pF
V_CB=10V, f=140kHz, I_E=0
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device